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采用反应磁控溅射工艺,通过改变N2气流量,在Si衬底上沉积300nm厚TiN薄膜。用原子力显微镜(AFM)观察薄膜表面形貌,并根据分形理论予以定量表征。结果表明,TiN薄膜的溅射模式与分形维数Df值的演化存在相关性,随着N2气流量由0.0%增加至4.0%,TiN薄膜溅射方式属于金属模式,Df保持不变;当N2气流量增加至10.0%时,溅射方式为过渡模式,Df急剧减小;而当N2气流量超过10.0%后,薄膜溅射为氮化物模式,Df轻微增加。
A reactive magnetron sputtering process was used to deposit a 300 nm thick TiN thin film on a Si substrate by varying the N2 gas flow rate. The surface morphology of the film was observed by atomic force microscopy (AFM) and quantified according to the fractal theory. The results show that there is a correlation between the sputtering mode of TiN film and the evolution of fractal dimension Df value. With the increase of N2 gas flow rate from 0.0% to 4.0%, the sputtering mode of TiN film belongs to metal mode and Df remains unchanged. When the gas flow rate increases to 10.0%, the sputtering mode is transition mode and Df decreases sharply. When the flow rate of N2 gas exceeds 10.0%, the film sputtering is in nitride mode and Df increases slightly.