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在国产CBE设备上，用GSMBE技术在国内首次生长出了一系列高质量的阱层具有不同In组分的InxGa1-xAs／InP应变多星子阶P-i-N结构材料，阶层中的设计In组分从0．39变化到0．68．用X射线双晶衍射对该组样品进行了测试分析，并用X射线衍射的运动学模型对衍射图样进行了计算机模拟，确定出了该组样品阶层中的In组分、阶宽及垒宽．结果表明，每个样品的DCXRD衍射图样上均至少可以看到14个锐而强的卫星峰，且模拟曲线与测得的衍射曲线符合得相当好，说明材料结构完整、具有较高的质量；样品的设计参数与计算机模拟得到的参数基本一致，说明生长过程可以很好的控制．
In domestic CBE equipment, a series of high-quality InxGa1-xAs / InP strained multi-star PiN structural materials with different In compositions have been grown in China for the first time using GSMBE technology. The designed In composition in the strata ranges from 0 .39 changes to 0.68. The samples were analyzed by X-ray double crystal diffraction. The diffraction pattern was simulated by X-ray diffraction kinetic model, and the In composition, width and base width of the sample were determined. The results show that at least 14 sharp and strong satellite peaks can be seen on the DCXRD diffraction pattern of each sample, and the simulated curve is in good agreement with the measured diffraction curve, indicating that the material has a complete structure and high quality. The sample design parameters and computer simulation of the parameters are basically the same, indicating that the growth process can be well controlled.