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本文研究了溅射制备的三明治结构Ta/Co_(60)Fe_(20)B_(20)/MgO合金薄膜的磁、热、电及晶化动力学特性.10–100 nm厚度的沉积态合金薄膜单位面积磁化强度和厚度呈现了极好的线性相关性,由此拟合出沉积态合金薄膜有效饱和磁化强度高达793.7 emu cm(-3).转角磁测量揭示了沉积态的合金薄膜具有面内磁单轴各向异性,其大小为10~4 erg cm~(-3)数量级.发现4重对称的立方结构磁各向异性随着退火温度升高而增大,这与XRD衍射测量的样品结构的变化一致.热磁曲线揭示了合金薄膜随温度有相当大变动的饱和磁化强度,这来源于合金晶化与温度相关的铁磁行为的竞争作用.伴随结构变化,观察到明显的合金薄膜电阻随温度的变化.通过变速率加热电阻测量得到晶化激活能为1.43 eV,表明该合金材料具有很好的热稳定性.
In this paper, the magnetic, thermal, electric and crystallization kinetics of Ta / Co 60 Fe 20 B 20 / MgO thin films prepared by sputtering were studied. The deposited films of 10-100 nm in thickness The excellent linear dependence of magnetization and thickness per unit area was obtained, and the effective saturation magnetization of the as-deposited alloy films was fitted as high as 793.7 emu cm -3. The angular magnetometry revealed that the as-deposited alloy films had in-plane Magnetic anisotropy with a magnitude of 10-4 erg cm ~ (-3) .It is found that the magnetic anisotropy of the cubic structure with 4-fold symmetry increases with the increase of the annealing temperature, which is consistent with the XRD diffraction measurement of the sample And the change of structure is consistent.The thermomagnetic curve reveals the saturation magnetization of the alloy thin film with considerable temperature change, which is due to the competition of the ferromagnetic behavior related to temperature and the crystallization of the alloy.With the structural changes, obvious alloy thin films The resistance changes with temperature, and the activation energy of crystallization is 1.43 eV as measured by a variable rate heating resistance, which indicates that the alloy has good thermal stability.