Dear editor,rnFerroelectric tunneling FETs(FeTFETs)are the increasingly significant research topics on novel low-power electronic devices[1,2],because ferro-electric materials'negative capacitance effect is helpful to boost the channel potential and increase the on-state current in TFETs.Ferroelectric ma-terials show radiation hard performance against radiation,which is helpful for devices based on this type of material utilized in harsh environ-ment[3,4].Single-event-transient(SET)effects are caused by high energy particles in space or terrestrial radiation environment,which may in-crease the probability of soft-error or even lead to catastrophic accidents in the spacecraft[5,6].Re-search on the irradiation effects of FeTFETs under heavy ion strike is therefore extremely important to evaluate use of these devices for potential mis-sions in space environments.In order to boost the devices'performance,we propose a new silicon-on-insulator double-gate FeTFET(SOI DG-FeTFET)with the Si:HfO2 ferroelectric gate dielectric.The single-event-transient effects in SOI DG-FeTFET were investigated using a synopsys sentaurus tech-nology computer aided design(TCAD)simula-tor[7].