本文报导了锑乳胶源埋层扩散的实验结果,讨论了影响扩散质量的若干因素,并与箱法锑扩进行了比较.实验获得埋层薄层电阻为20Ω/□,结深(?)5μm,表面浓度为2.1×10~(19)/cm~3.直径为75mm硅片,其薄层电阻的片内相对偏差<2.5%,同炉片间的相对偏差<3%,不同批之间的相对偏差<10%. In this paper, the experimental results of the diffusion of antimony latex in the buried layer are reported, and some factors that affect the diffusion quality are discussed and compared with the box method of antimony diffusion. The resistance of the buried layer is 20Ω / □, the junction depth is 5μm , The surface concentration of 2.1 × 10 ~ (19) / cm ~ 3. 75mm diameter silicon wafer, the sheet resistance of the chip relative deviation of <2.5%, with the furnace relative deviation of <3% between different batches The relative deviation <10%.