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利用Se电化学喷射炉产生的Se分子束,对分子束外延(MBE)GaAs掺杂,获得了载流子浓度为 10~(15)-10~(15)cm~(-3)的N型 GaAs. 载流子浓度 8.0 ×10~(15)-5.76 × 10~(15)cm~(-3)范围相应的室温迁移率为6350-5200cm~2/V·s.还研究了各种生长参数对载流子浓度的影响.对实验结果给予了定性的解释.
The molecular beam epitaxy (MBE) GaAs was doped by Se molecular beam generated by the Se electrochemical spray furnace to obtain a N-type carrier with a carrier concentration of 10-15 cm-10-15 cm -3 The corresponding room temperature mobility for the carrier concentration ranged from 8.0 × 10 15 to -5.76 × 10 15 cm -3 was 6350-5200 cm -2 / V · s. Various growth The influence of parameters on the carrier concentration is given qualitatively.