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本文对热壁低压化学蒸汽淀积技术进行了计算机模拟计算.利用硅烷热分解可以制取均匀性良好的多晶硅膜.如假定气流中反应物径向浓度梯度为零.并引入硅烷转化率参数,就可以直接推导出淀积速率分布的理论计算式.计算结果与实验基本相符.通过电子计算机的一系列计算,从理论上得出了一些指导性的结论.
In this paper, the thermal wall low pressure chemical vapor deposition technology was calculated by computer simulation.Using silane thermal decomposition can be prepared with good uniformity of polycrystalline silicon film, such as the assumption that the reactant radial concentration gradient is zero, and the introduction of silane conversion parameters, The theoretical calculation formula of the deposition rate distribution can be directly deduced.The calculation results are in good agreement with the experimental results.A series of calculations of the electronic computer are used to draw some theoretical conclusions.