论文部分内容阅读
一、前言 SiO_2乳胶扩散源的出现,开辟了氧化扩散工艺的新领域,由于它具有一般固态,液态源扩散所没有的一系列优点,可以它的出现引起人们的重视,目前它已成为一种有希望的扩散源,参加集成电路的会战。 由于SiO_2乳胶扩散源可会的元素相当多（AS、P、B、Al,Au,Sb,Ge等）掺会浓度可在10~(16)—10~(21)个/cm~3范围调整,所以TTL电路中的基区、发射区、收集区、MOS、CMOS电路中的漏、源区、阱均可以考虑使用,并可用磷硼乳胶做成磷硅玻膜,硼硅破膜作为表面钝化,以外获可子钠,提高器件的稳定性和可靠性。 本文将重探讨SiO_2乳胶源扩散在MOS、CMOS集成电路中的应用于以及乳胶Ⅲ—V族元素同步扩散问题,试图缩短工艺流程,减少光刻次数和高温处理时间。
I. INTRODUCTION The emergence of SiO 2 latex diffusion source has opened up a new field of oxidation diffusion process. Due to its advantages of having a series of advantages that ordinary solid-state and liquid-source diffusion do not have, its appearance has aroused people’s attention. At present, it has become a A promising source of proliferation to participate in the battle of integrated circuits. Due to the considerable amount of elements that may be present in the diffusion source of SiO 2 latex (AS, P, B, Al, Au, Sb, Ge, etc.), the concentration can be adjusted in the range of 10 ~ (16) -10 ~ (21) , So TTL circuit in the base area, the emitter area, the collection area, MOS, CMOS circuits in the drain, the source area, the well can be considered to use, and can be made of phosphorus-boron-phosphorus latex glass, glass, Passivated, and beyond by the child sodium, improve the stability and reliability of the device. This article will revisit the application of SiO 2 latex source diffusion in MOS and CMOS integrated circuits and the simultaneous diffusion of Ⅲ-V latex particles in order to shorten the process flow and reduce the number of lithography and the high temperature processing time.