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为在HSPICE中建立一种计算简单且精度较高的碳纳米管场效应管(carbon nanotube field effect transistor,CNTFET)模型,在CNTFET半经典建模方法的基础上,分析了自洽电势与载流子密度之间的关系,提出用线性近似进行拟合,并推导了自洽电势的显式表达式,从而避免了积分方程的迭代求解过程.然后在HSPICE中建立了相应的CNTFET模型,通过仿真比较,结果表明该模型具有较高的精度,用其构建的逻辑门电路能够实现相应逻辑功能,且运算时间大为减少.
In order to establish a simple and highly accurate carbon nanotube field effect transistor (CNTFET) model in HSPICE, based on the semiclassical CNTFET modeling method, the self-consistent potential and carrier current The relationship between the density and the density is proposed, and the linear approximation is proposed to fit the expression and the explicit expression of the self-consistent potential is deduced, which avoids the iterative process of the integral equation.Then the corresponding CNTFET model is established in HSPICE, The results show that the model has high precision, and the logic gates constructed by it can realize the corresponding logic functions, and the operation time is greatly reduced.