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对SOI/SDB薄膜全耗尽隐埋N沟MOSFET(FDBC NMOSFET)的器件结构及导电机理进行了深入研究,建立了明确的物理解析模型,推导出各种状态下器件工作电流的解析表达式。并将解析模型的计算结果与实验数据进行了比较和讨论。
The device structure and conduction mechanism of the fully depleted N-channel MOSFET (FDBC NMOSFET) of SOI / SDB thin film are studied in depth. A clear physical analysis model is established and an analytical expression for the operating current of the device in various states is deduced. The results of the analytical model are compared with the experimental data.