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近来,J.F.Verwey等首次提出了关于P-n结击穿电压蠕变的定量模型,从理论上计算出△V_(BV)(t)～t半对数曲线。和实验结果比较,在曲线的直线部分符合地较好,但对t值较大的一段曲线,理论和实验存在着很大的偏差。本文提出了雪崩击穿时,热载流子填充Si—SiO_2界面陷阱存在着饱和效应。考虑了此效应后的理论和实验结果符合地较好。
Recently, J.F.Verwey and others for the first time put forward a quantitative model of P-n junction breakdown voltage creep, from the theoretical calculation △ V_ (BV) (t) ~ t semi-logarithmic curve. Compared with the experimental results, the linear part of the curve is in good agreement, but for the curve with larger t value, there is a big deviation between theory and experiment. In this paper, the saturation effect of hot carrier-filled Si-SiO 2 interface traps is proposed when avalanche breakdown occurs. The theoretical and experimental results after considering this effect are in good agreement.