论文部分内容阅读
通过测试不同工艺条件下的导电丝形成算法与低阻阻值分布、烘烤失效率等的关系,研究了阻变存储器(RRAM)单元导电细丝形成过程对可靠性的影响,进一步对导电细丝形成过程的模型进行了优化。实验表明,随着脉宽的增大,操作电压幅值降低、成功率提高、烘烤失效率降低,进一步增加脉宽,烘烤失效率大大增加。通过比较不同工艺,发现在烘烤失效率降低时的脉宽条件(1 ms)下,氧化时间短、氧化功率大并且无退火条件的失效率高;而在烘烤失效率增加时的脉宽条件(10 ms)下,氧化时间短、氧化功率大并且无退火条件的失效率低。研究结果为设计RRAM单元操作算法提供了优化方向,同时通过对不同条件下RRAM单元可靠性的比较,优化了工艺配方。
The relationship between the formation of conductive filament and the low resistance value distribution and the failure rate of baking under different process conditions were tested. The influence of the forming process of RRAM filament on the reliability was studied. The silk formation process model was optimized. Experiments show that as the pulse width increases, the operating voltage amplitude decreases, the success rate increases, the baking failure rate decreases, and further increase the pulse width, baking failure rate increased greatly. By comparing different processes, it was found that the pulse-width conditions (1 ms) at the time when the failure rate of the bake decreased, the oxidation rate was short, and the oxidation efficiency was high and the failure rate was high without annealing; while the pulse width Conditions (10 ms), the oxidation time is short, high oxidation power and low failure rate without annealing conditions. The research results provide the optimization direction for the design of RRAM unit operation algorithm. At the same time, the process recipe is optimized by comparing the reliability of RRAM unit under different conditions.