利用反应离子刻蚀 ( RIE)和湿法腐蚀方法在 In Ga As/ In Ga As P多量子阱材料上研制出直径为 8μm、4 .5μm和 2 μm的碟型半导体微腔激光器。其中 2 μm直径的微碟在液氮温度下其光泵浦激射阈值仅为 3 μW左右。对高光功率密度下泵浦时出现的多模激射、跳模和激射光谱强度饱和现象进行了研究。并对微碟激光器的激射光谱线宽特性进行了初步的分析 A dish type semiconductor microcavity laser with diameters of 8 μm, 4.5 μm and 2 μm was fabricated on In Ga As / In Ga As P multiple quantum well by reactive ion etching (RIE) and wet etching. Among them, the optical pumping lasing threshold of 2 μm diameter microdisk is only about 3 μW at liquid nitrogen temperature. The phenomenon of multi-mode lasing, mode hopping and saturation of the laser spectrum intensity during pumping under high optical power density was studied. The laser linewidth characteristics of lasers are analyzed preliminarily