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对高Al组分AlxGa1-xN(x=50%)进行了ICP刻蚀实验研究,在刻蚀深度相同的前提条件下,对比分析了ICP腔室压力与AlGaN表面损伤之间的相互关系,并讨论了低温热退火对ICP刻蚀损伤的修复作用。XPS测试结果表明,与未经刻蚀的AlGaN表面相比,ICP刻蚀之后的AlGaN表面其表面氮空位VN明显增多,且Al2p、Ga3d等峰位均向高结合能方向漂移。分析讨论发现,ICP腔室压力过小或过大均不利于获得低损伤的刻蚀表面,此外,低温热退火(380℃-200s)对表面氮空位有一定的修复作用,但修复效果较为有限。
ICP etching experiments on AlxGa1-xN (x = 50%) with high Al content were carried out. Under the same etching depth, the relationship between ICP chamber pressure and AlGaN surface damage was compared and analyzed. The repair effect of low temperature thermal annealing on ICP etching damage is discussed. The results of XPS show that the surface nitrogen vacancy VN of AlGaN after ICP etching is obviously increased and the peak positions of Al2p and Ga3d drift towards high binding energy compared with that of the non-etched AlGaN surface. Analysis and discussion found that ICP chamber pressure is too small or too large are not conducive to low-damage etched surface, in addition, low-temperature thermal annealing (380 ℃ -200s) on the surface nitrogen vacancy have some repair, but the repair effect is more limited .