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利用扫描隧道显微镜(STM)对Si(111)在氨气气氛下进行氮化所获得的氮化硅薄膜形貌和表面结构进行了系统分析,结果表明在1075—1275K的温度下对Si(111)进行氮化可以获得较平整的晶态βSi3N4薄膜,并在氮化膜表面观察到了Si3N4(0001)表面的(4×4)再构.
The morphology and surface structure of Si3N4 thin films obtained by nitriding Si (111) in ammonia were systematically analyzed by scanning tunneling microscope (STM). The results show that Si (111) ) To obtain a smoother crystalline βSi3N4 thin film, and the (4 × 4) reconstruction of the Si3N4 (0001) surface was observed on the surface of the nitride film.