许多氧化物单晶的生长都需要很高的温度和高于大气压的氧气氛。通常作为高温炉发热体的石墨、钼、钨等只能在还原性气氛中工作。而当炉温超过1650℃时,碳化硅、二硅化铝等发热体也都会迅速氧化损坏。如果用还原性气氛保护石墨发热体,而在生长单晶的炉膛空间中充以氧气,正如文献[1]的作法,则设备较为复杂而且操作有危险。 The growth of many oxide single crystals requires very high temperatures and oxygen atmospheres above atmospheric pressure. Graphite, molybdenum, tungsten and the like which are usually used as a heating body of a high-temperature furnace can only work in a reducing atmosphere. When the furnace temperature exceeds 1650 ℃, silicon carbide, aluminum disilicide and other heating elements will also be rapidly oxidized and damaged. If we use a reducing atmosphere to protect the graphite heating element, and the growth of single crystal furnace space filled with oxygen, as the literature [1] approach, the equipment is more complex and the operation is dangerous.