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本文使用快速热处理超低压ＣＶＤ方法，通过分解ＳｉＨ４及ＧｅＨ４气体生长ＳｉＧｅ合金层．俄歇电子能谱被用来检测ＳｉＧｅ合金中Ｇｅ的组分和ＳｉＧｅ合金层的厚度．实验发现：随着生长温度的升高，ＳｉＧｅ合金中Ｇｅ原子的结合率增加到最大值，然后减小；ＳｉＧｅ合金的生长速率在随生长温度增加过程中存在一个最大值；同时Ｇｅ原子的结合还会导致ＳｉＧｅ合金中Ｓｉ原子淀积速率的上升．根据低温及低Ｇｅ组分下氢解吸几率的增加与高温高Ｇｅ组分下反应基团吸附几率的下降，本文对以上实验结果进行了解释．
In this paper, rapid thermal treatment of ultra-low pressure CVD method, by decomposition of SiH4 and GeH4 gas growth SiGe alloy layer. Auger electron spectroscopy was used to examine the composition of Ge in SiGe alloys and the thickness of SiGe alloy layers. The experimental results show that with the increase of the growth temperature, the bonding ratio of Ge atoms in SiGe alloy increases to the maximum and then decreases. The growth rate of SiGe alloy has a maximum value as the growth temperature increases. At the same time, the binding of Ge atoms It also leads to an increase in Si atomic deposition rate in SiGe alloys. According to the increase of hydrogen desorption probability under low temperature and low Ge content and the decrease of adsorption probability of reactive groups under high temperature and high Ge content, the above experimental results are explained.