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针对InGaAs/InP雪崩光电二极管(APD)器件结构,介绍了本地电场模型在器件设计上的应用。采用数值计算的方法,导出了吸收区、渐变区、电荷区和倍增区分离的(SAGCM)APD的电场分布。基于本地电场模型讨论了不同器件结构参数对器件穿通电压、击穿电压、倍增因子等特性的影响,实验结果与模拟结果相吻合,表明此方法可以用于器件的结构设计优化及特性分析。在此方法指导下,制作出了SAGCM APD。测试结果表明器件穿通电压小于30V,击穿电压小于45V,在倍增因子为1时,器件响应度大于0.9A/W,在倍增因子为10时,器件暗电流小于10nA,在倍增因子为5~12时,-3dB带宽均大于3GHz,其性能满足2.5Gbit/s光纤通信应用要求。
Aiming at the structure of InGaAs / InP avalanche photodiode (APD) device, the application of local electric field model in device design is introduced. The distribution of the electric field of SAGCM APD is deduced by using the numerical calculation method. Based on the local electric field model, the influence of different device structure parameters on the device penetration voltage, breakdown voltage and multiplication factor is discussed. The experimental results are in good agreement with the simulation results. The results show that this method can be used to optimize the structure design and characterize the device. Under the guidance of this method, a SAGCM APD was produced. The test results show that the device punch-through voltage is less than 30V, breakdown voltage is less than 45V, the device responsivity is greater than 0.9A / W when the multiplication factor is 1, dark current is less than 10nA when the multiplication factor is 10, 12dB, -3dB bandwidth are greater than 3GHz, its performance to meet the 2.5Gbit / s optical fiber communication applications.