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为了准确表征单壁碳纳米管(SWNT)随机网络薄膜晶体管(TFT)的输出特性,采用蒙特卡罗方法实现对沟道区域SWNT随机分布情况的仿真,并且通过在弹道输运模型中引入与栅压相关的拟合参数α(Vg)拟合碳管间、碳管与金属电极间接触的影响,最终获得SWNT随机网络TFT输出特性的仿真结果。实验中,以溶液浸泡法制备SWNT薄膜作为TFT沟道材料,以与传统工艺兼容的淀积、刻蚀等步骤制备了TFT,并进行了器件输出特性的测试。实验验证表明,沟道宽度为50μm、长度为10μm TFT的输出特性测试数据与仿真拟合的误差仅为5.6%。此仿真方法能较准确地描写SWNT随机网络TFT的输出特性,通过对蒙特卡罗仿真参数的调整,能预测薄膜晶体管跨导随几何尺寸的变化。
In order to accurately characterize the output characteristics of a single-walled carbon nanotube (SWNT) random network thin film transistor (TFT), a Monte Carlo simulation of the random distribution of SWNTs in the channel region was performed. The influence of the pressure-related fitting parameter α (Vg) on the contact between carbon nanotubes, carbon nanotubes and metal electrodes was obtained. Finally, the simulation results of SWNT random network TFT output characteristics were obtained. In the experiment, the SWNT film was prepared by the solution immersion method as the TFT channel material, and the TFT was prepared by the deposition, etching and other steps compatible with the conventional process, and the device output characteristics were tested. The experimental verification shows that the error of the output characteristic test data of the TFT with the channel width of 50μm and the length of 10μm and the simulation fitting is only 5.6%. This simulation method can accurately describe the output characteristics of the SWNT random network TFT. By adjusting the Monte Carlo simulation parameters, it can predict the variation of the transconductance of the thin film transistor with the geometric size.