论文部分内容阅读
我们用光学发射光谱(OES)测量法研究了激光等离子体化学气相淀积(LPCVD)条件下SiH_4分解产物的光谱特性。一、引言目前国内外已利用LPCVD方法成功地淀积出许多金属、半导体和化合物材料。作者用OES方法测量了LPCVD条件下SiH_4激光等离子体中分解产物的发射光谱分布,确定了主要发光物质,并测量了不同实验条件下的对应关系。在强激光辐照SiH_4样品产生等离子体时,等离子体本身有较大能量使SiH_4分
We used optical emission spectroscopy (OES) measurement to study the spectral characteristics of SiH_4 decomposition products under laser plasma chemical vapor deposition (LPCVD). I. INTRODUCTION At present, many metals, semiconductors and compound materials have been successfully deposited at home and abroad by LPCVD. The authors used the OES method to measure the emission spectra of the decomposition products of the SiH_4 laser plasma under the LPCVD conditions, determined the major luminescent materials, and measured the corresponding relationship under different experimental conditions. In strong laser irradiation SiH_4 sample plasma, the plasma itself has a larger energy to SiH_4 points