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采用激光加热基座生长法(LHPG)生长出Ta_2O_5单晶,测量了所生长晶体的介电系数和介电损耗随晶格方向的关系。Ta_2O_5晶体表现出很强的介电各向异性,并且其介电系数的平均值比 Ta_2O_5陶瓷的大许多。Ta_2O_5单晶的成功生长证明了LHPG技术在生长高熔点晶体方面所具有的独特能力,同时也表明它作为一种特殊的激光材料加工技术在材料科学与工程中将发挥重要作用。
The Ta_2O_5 single crystal was grown by laser heating pedestal growth method (LHPG). The dielectric constant and dielectric loss of the grown crystal were measured with the lattice direction. Ta_2O_5 crystal shows strong dielectric anisotropy, and its average dielectric constant is much larger than that of Ta_2O_5 ceramics. The successful growth of Ta_2O_5 single crystal proves the unique ability of LHPG technology to grow high-melting-point crystal and also shows that it plays an important role in materials science and engineering as a special laser material processing technology.