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本文首次报道a-GaAs(:H)膜暴露于激活态氧之后的光电子谱的测量结果.样品是在超高真空系统中,在Ar和H_2的混合气体中用直流溅射方法原位制备的.氧的吸附在a-GaAs(:H)的价带谱中诱导一个在价带顶(VBM)之下4.7eV的峰和位于7—9eV的一个弱结构.通过与晶态GaAs表面氧的吸附结果的比较,我们推测,在非晶态GaAs表面可能只存在离解态氧的吸附.
This paper reports for the first time the measurement of photoelectron spectra of a-GaAs (H) films exposed to activated oxygen.The samples were prepared in-situ by a DC sputtering method in a mixed gas of Ar and H 2 in an ultra-high vacuum system . Adsorption of oxygen induces a peak at 4.7 eV below the valence band top (VBM) and a weak structure at 7-9 eV in the valence band spectrum of a-GaAs (: H) Adsorption results, we speculate that in the amorphous GaAs surface may only exist dissociative oxygen adsorption.