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等离子腐蚀和射频电场内的低温消失,在半导体工艺和生产中,有了许多用途。其优点是在生产过程中可以保持干燥,而毋需使用“湿”的溶液。如果含有氟的基本气体引进了电场,那么就产生了激活的氟离子,它会严重的侵蚀硅和二氧化硅,但是,不会侵蚀金属铝和镍铬合金,这一点非常重要。在铝互连和易熔性的镍铬条上除去玻璃钝化层,进行选择性的腐蚀具有很大的好处。借助于电子微探针和等离子腐蚀,研究程序唯读存储器内被熔化了的镍铬条,从而测定金属熔化前后的位置和变化。介绍了一些用等离子腐蚀代替玻璃钝化层的湿化学腐蚀的例子。最后,叙述了用等离子腐蚀工艺促进接触窗口铝合金的研究。
Plasma erosion and the disappearance of low-temperature RF field, in semiconductor technology and production, has many uses. The advantage is that it can be kept dry during the manufacturing process without using a “wet” solution. If a fluorine-containing base gas introduces an electric field, then activated fluoride ions are produced that can seriously attack silicon and silicon dioxide, but it is important not to attack aluminum and nichrome. It is of great benefit to remove the glass passivation layer on aluminum interconnects and fusible nichrome bars for selective etching. With the help of electron microprobe and plasma etching, the Ni-Cr strips melted in the program ROM were studied to determine the position and the change of the metal before and after melting. Some examples of wet chemical corrosion using plasma etching instead of glass passivation are presented. Finally, the research of plasma etching process to promote the contact window aluminum alloy is described.