Studies on Dielectric Properties of Silicon Nitride at High Temperature

来源 :Journal of Electronic Science and Technology of China | 被引量 : 0次 | 上传用户:rui1986911
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In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li+, K+, Ca2+, Al3+ and Mg2+ doping on the dielectric properties of silicon nitride are also estimated. In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li +, K + Ca2 +, Al3 + and Mg2 + doping on the dielectric properties of silicon nitride are also estimated.
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