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基于氧化多孔硅的ＳＯＩ结构＝［刊，俄］１９９４，２３（６）－６１～６８本文研究了在１００ｍｍ硅片上基于氧化多孔硅的ＳＯＩ结构的主要制作工艺过程。所开发的工艺具有操作简单、成本低和生产率高等特点，可以制作出与衬底隔离的０．２～０．５μｍ厚的无缺陷单晶硅...
SOI Structure Based on Oxidized Porous Silicon 1994, 23 (6) -61 ~ 68 The main production process of SOI structure based on oxidized porous silicon on 100mm silicon wafer has been studied. The developed process has the advantages of simple operation, low cost and high productivity, and can produce the defect-free single-crystal silicon with the thickness of 0.2-0.5 μm isolated from the substrate ...