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据《Electronics Letters》1979年7月19日刊报导: 日本电气公司中央研究所的K·TAGUCHI等人首次成功地制造了一种具有平面结构的高增益InP-InGaAsP雪崩光电二极管。采用一种Gd扩散的平面结以及通过在InGaAsP光吸收层上的具有更宽带隙的InP层而形成的PN结,显著改善了器件的雪崩增益和暗电流特性。
According to “Electronics Letters” July 19, 1979, K · TAGUCHI et al. Of the Central Research Institute of NEC have for the first time succeeded in fabricating a high-gain InP-InGaAsP avalanche photodiode with a planar structure. The use of a Gd-diffused planar junction and a PN junction formed by an InP layer with wider bandgap on the InGaAsP light-absorbing layer significantly improves the avalanche gain and dark current characteristics of the device.