论文部分内容阅读
一九七五年二月二十五日,出席第四届半导体及其它材料离子注入国际会议代表谢玉发同志来我校作报告,介绍会议情况。参加报告会的有省市科委、电子局以及有关工广、研究所、高等院校等单位的负责同志、工人、研究人员、教师、学员共一百多人。谢玉发同志在报告中说,第四届离子注入国际会议于1974年8月26日至30日在日本大阪举行,我国青年的离子注入技术工作者第一次出席国际学术会议,受到代表们的热烈欢迎。离子注入技术是六十年代后期发展起来的研制半导体器件的一项新工艺,由于它能精确
On February 25, 1975, Comrade Xie Yufa, who attended the Fourth International Conference on Ion Implantation of Semiconductor Materials and other materials, came to our school for a report on the conference. A total of more than 100 responsible comrades, workers, researchers, teachers and trainees attended the seminar, including the provincial and municipal science and technology commissions, the E-bureau, and relevant work-related institutes, research institutes and institutions of higher learning. Comrade Xie Yufa said in the report that the Fourth International Conference on Ion Implantation was held in Osaka, Japan from August 26 to August 30, 1974. The young ion implantation workers in our country attended the international academic conference for the first time and were warmly received by deputies welcome. Ion implantation technology was developed in the late 1960s, a new technology for the development of semiconductor devices, because it can be accurate