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低压化学蒸汽淀积(LPOVD)的三维计算机模拟算式,仅对具有一级化学反应级数的淀积过程,能够给出数学解析解的表示式,而对非一级反应的问题,只能通过数值求解偏微分方程确定片内均匀性.因此,在使用这套算式对淀积薄膜的片内和片间厚度分布进行模拟计算时,由于计算繁琐费时,所需计算机内存量较大,不适于微型计算机的运行和处理.为此,我们参考一维LPCVD 计算机模拟通式导出的基本思想,建立类似文献[1]中的理论模型,即将整个淀积区划分为主气流区(Ⅰ区)和扩散一迁移区(Ⅰ区),进而在圆柱型反应管的轴向和径向,分别引入片间和片内的反应物
The three-dimensional computer simulation of low pressure chemical vapor deposition (LPOVD) shows that the expression of mathematical analytical solution can be obtained only for the deposition process with first-order chemical reaction series, and the problem of non-first-level reaction can only be solved by Numerical solution of partial differential equations to determine the uniformity of the chip.Therefore, in the use of this set of algorithms for the deposition of thin films and on-chip thickness distribution simulation, due to the calculation of complex time-consuming, the required amount of computer memory is larger, not suitable Micro-computer operation and processing.To this end, we refer to the one-dimensional LPCVD computer simulation formula derived the basic idea, the establishment of a similar literature [1] theoretical model, namely the entire deposition area is divided into the main airflow area (Ⅰ area) and Diffusion of a migration zone (Ⅰ area), and then in the axial direction of the cylindrical reaction tube and the radial, were introduced into the chip and chip reactants