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多晶硅薄膜的性质与膜的结构有密切关系.界面结构主要指晶粒尺寸、择优取向及其结构,多晶硅薄膜的结构主要由沉积条件、膜厚、掺杂条件和后来的退火温度和退火时间所决定.本文讨论了用常规低压化学汽相淀积(LPCVD)方法制备的多晶硅薄膜的结构特性,初步获得了提高多晶硅压力传感器灵敏度及其温度稳定性的条件.
The nature of the polycrystalline silicon thin film is closely related to the structure of the film.The interface structure mainly refers to the grain size, preferred orientation and structure, the structure of the polycrystalline silicon thin film mainly consists of deposition conditions, film thickness, doping conditions and subsequent annealing temperature and annealing time This paper discusses the structural characteristics of polycrystalline silicon thin films prepared by conventional low pressure chemical vapor deposition (LPCVD) method and preliminarily obtains the conditions for improving the sensitivity and temperature stability of the polysilicon pressure sensor.