p型GaN薄膜的实现是发展光电器件的关键工艺。使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。最近几年在掺杂工艺的改进和掺杂模型的理论研究方面都取得了显著进展。介绍了p型掺杂GaN中的自补偿模型、共掺杂工艺的原理和进展、PL谱的性质以及一些新的掺杂工艺。 The realization of p-type GaN film is the key process for the development of optoelectronic devices. Practical p-type doping has been achieved using the Metal Organic Chemical Vapor Deposition (MOCVD) method, but neither of its electrical and optical properties are satisfactory. In recent years, significant progress has been made in both the improvement of doping technology and the theoretical research of doping model. The self-compensation model of p-doped GaN, the principle and progress of co-doping, the properties of PL spectra and some new doping processes are introduced.