采用射频磁控共溅射方法制备了纳米Ge颗粒尺寸的Ge SiO2 薄膜、非晶Si SiO2 薄膜和非晶AlSiO复合薄膜 ,分析了样品的结构 ,研究发现 3类样品均存在较强的光吸收 ,对于Ge SiO2 薄膜观察到光吸收边随Ge颗粒尺寸变小而蓝移的现象 ,这主要是由于Ge颗粒的量子限域效应所引起的。而对于非晶样品也出现了光吸收边蓝移和能隙展宽的现象 ,这可能是由于样品中的杂质或缺陷等受到限域作用的结果 Ge SiO2 thin films, amorphous Si SiO2 thin films and amorphous AlSiO thin films with nano-Ge particle size were prepared by radio-frequency magnetron co-sputtering method. The structure of the samples was analyzed. It was found that there were strong light absorption, The phenomenon that the light absorption edge decreases with the size of the Ge particles blue shift is observed for the Ge SiO2 film, which is mainly caused by the quantum confinement effect of the Ge particles. For the amorphous samples, blue absorption at the absorption edge and band gap broadening also appeared, which may be the result of the confinement of impurities and defects in the sample