【摘 要】
：
InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system.In addition,strained superlattices were used to prevent threading disloca-tions from propagat
【机 构】
：
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sci
论文部分内容阅读
InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm2 at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.
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