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将氮化硅陶瓷的样品经过抛光、清洗、退火等处理后，用离子束辅助沉积（ＩＢＡＤ），离子注入对其进行表面处理，所选用元素为Ｔｉ。辅助轰击的离子为Ａｒ＋和Ｔｉ＋，能量为１００ＫｅＶ；注入离子能量为８０ＫｅＶ和１００ＫｅＶ，注入剂量范围为１０１６至１０１７Ｔｉ／ｃｍ２。用Ｘ射线衍射法和ＡＥＳ对样品的结构和Ｔｉ的深度分布进行了测试，发现注入样品的晶格结构遭到了一定程度的破坏，并且有ＴｉＮ等新相析出。ＩＢＡＤ样品的抗弯强度增加较大，比未处理样品提高９％。注入样品的抗弯强度值随剂量增加而逐步增加。注入样品的显微硬度和断裂韧性随剂量的增加而下降
After the sample of silicon nitride ceramic is polished, cleaned, annealed and the like, it is surface-treated by ion beam assisted deposition (IBAD) and ion implantation, and the selected element is Ti. The ions bombarded for bombardment were Ar + and Ti + and the energy was 100 KeV; the energy of implanted ions was 80 KeV and 100 KeV, and the implantation dose range was 1016 to 1017 Ti / cm2. The structure of sample and the depth distribution of Ti were tested by X-ray diffraction and AES. It was found that the lattice structure of the implanted sample was destroyed to a certain degree, and new phases such as TiN were precipitated. The flexural strength of IBAD samples increased significantly, 9% more than the untreated samples. The flexural strength of injected samples gradually increased with dose. The microhardness and fracture toughness of the injected samples decreased with the increase of dose