近三年来,我们进行了超薄介质膜MIS,隧道二极管和太阳电池的研究。到去年为止,所研制的MIS结构的二极管,格栅型电池和全面积铝电池都获得了较好的器件参数,且工艺重复性好、器件参数较一致。在这三种器件研制中的关键工艺之一就是超薄介质膜厚度的控制问题。国外近年来也有相当多的文章发表,一 In the past three years, we have conducted research on ultrathin dielectric film MIS, tunnel diode and solar cell. Until last year, the developed MIS structure of the diode, grille-type batteries and full-area aluminum batteries have been better device parameters, and process repeatability, the device parameters are more consistent. One of the key processes in the development of these three devices is the control of the thickness of the ultra-thin dielectric film. In recent years, there are quite a few foreign papers published, one