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随着片上系统(SoC)电源电压的降低,嵌入式快闪存储器内部电荷泵电路的电压增益不断下降。为提高低电源电压下电荷泵电路的效率,提出了一个基于两路互补结构的高效率电荷泵电路,并设计了栅压提高电路与衬底调节电路,二者的共同作用可以有效地减少传输电压的损失,提高电荷泵电路的电压增益。模拟结果表明:当电源电压为1.5V时,相比于传统的电路结构,所提出的电荷泵电路电压增益有很大的提高。该电路特别适用于低电源电压下工作的嵌入式快闪存储器。
As the system-on-chip (SoC) power supply voltage decreases, the voltage gain of the internal charge-pump circuit in the embedded flash memory continues to decrease. In order to improve the efficiency of the charge pump circuit under the low power supply voltage, a high efficiency charge pump circuit based on two complementary structures is proposed and the gate voltage increase circuit and the substrate adjustment circuit are designed. Both of them can effectively reduce the transmission The voltage loss increases the voltage gain of the charge pump circuit. Simulation results show that when the power supply voltage is 1.5V, the voltage gain of the proposed charge pump circuit is greatly improved compared to the conventional circuit structure. This circuit is especially suitable for embedded flash memory operating at low supply voltages.