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介绍了计算CaAs∶Cs ONEA光电阴极电子表面逸出几率的方法 ,选用双偶极层表面模型 ,计算了两个偶极层形成的界面势垒各自对电子表面逸出几率的影响 ,提出了增大电子表面逸出几率的条件 ,并粗略推测了第一偶极层的厚度
The calculation method of calculating the escape probability of the electronic surface of CaAs: Cs ONEA photocathode is presented. The effect of interface potential barrier formed by the two dipole layers on the escape probability of the electron surface is calculated by using the surface model of double dipole layer. Large electronic surface escape probability of the conditions, and rough guess the thickness of the first dipole layer