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The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580℃. When the blue shift was 24.7 meV at 480℃, the COD power for the window LD was 86.7% higher than the conventional LD.
The layer structure of GaInP / AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the ends of the cavities. Zn diffusions were performed at 480, 500, 520, 540, and 580 ° C for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580 ° C. When the blue shift was 24.7 meV at 480 ° C, the COD power for the window LD was 86.7% higher than the conventional LD.