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本文报导了采用165 keV He~+离子沟道背散射技术研究高剂量铋注入<111>硅后,进行脉冲激光退火的效果,并和热退火作了比较。热退火温度达到900℃时,剩余晶格损伤还有35％;在750℃下退火时,铋的替位率达到最大值50％,温度再升高,替位率反而下降;在退火温度高于625℃时就产生大量铋原子的外扩散。面脉冲激光退火后,晶格损伤几乎全部消除,铋原子进行再分布,它在硅中的浓度可超过固溶度一个数量级,且95％以上处于替代位置。文中还就不同激光能量下的退火情况作了比较。
In this paper, the effect of pulsed laser annealing after high dose bismuth implantation on <111> Si is reported using a 165 keV He + ion channel backscatter technique and compared with thermal annealing. When the annealing temperature is 900 ℃, the remaining lattice damage is still 35%. When annealed at 750 ℃, the bismuth substitution rate reaches 50% of the maximum, the temperature increases and the substitution rate decreases. When the annealing temperature is high At 625 ° C, large amounts of Bismuth atoms diffuse out. After the surface pulse laser annealing, the lattice damage is almost completely eliminated, and the bismuth atoms are redistributed. The concentration in the silicon can exceed that of the solid solubility by an order of magnitude, and more than 95% are in the substitution position. The article also compares the annealing conditions under different laser energies.