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采用磁控溅射技术在热氧化单晶硅衬底上先后淀积了厚度分别为50 nm的Ta膜和400 nm的Cu膜。使用纳米压入仪在样品表面进行压入测试,在薄膜表面制造出残留压痕。使用扫描电镜(SEM)、聚焦离子束(FIB)、透射电镜(TEM)和X射线能谱仪(EDX)对残留压痕形貌、剖面上的分层现象进行观察,确定分层所在的位置。发现在69 mN的最大载荷作用后,在Ta/SiO2界面处发生分层。分层的原因主要归结为在应力作用下,多层膜中各种材料的应变、弹性恢复能力不同。
The Ta films with thickness of 50 nm and the Cu film with 400 nm were deposited on the thermally oxidized single crystal Si substrate by magnetron sputtering. Pressurization testing was performed on the sample surface using a nanoindenter to create a residual impression on the film surface. Scanning electron microscopy (SEM), focused ion beam (FIB), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) were used to observe the morphology of residual indentation and the delamination on the cross section. . It was found that delamination occurred at the Ta / SiO2 interface after a maximum load of 69 mN. The main reason for stratification is that under the action of stress, the strain and resilience of various materials in the multi-layer film are different.