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用卢瑟福背散射／沟道技术研究了３５０ｋｅｖＹｂ＋注入Ｓｉ（１００）所产生的表面非晶层在不同快速热退火温度下的固相外延结晶过程．实验结果表明，在８００℃－１０００℃的快速热退火温度下，在Ｙｂ＋射程范围以外的非晶层很容易固相外延结晶；但在同样退火温度下，在Ｙｂ＋射程分布范围内非晶层的团相外延结晶则非常缓慢．只有在退火温度高于１２００℃时，整个表面非晶层才完全消失．射程末端附近的复杂缺陷和缺陷杂质复合体是导致这两个不同结晶区域的主要原因．
The Ruthenhof backscattering / channel technique was used to study the solid-state epitaxy crystallization of surface amorphous layer produced by 350kevYb + implantation of Si (100) at different rapid thermal annealing temperatures. The experimental results show that the amorphous layer outside the Yb + range easily solid-phase epitaxial growth at the rapid thermal annealing temperature of 800 ℃ -1000 ℃, but at the same annealing temperature, the amorphous layer in the Yb + range distribution Complex phase epitaxial crystallization is very slow. Only when the annealing temperature is higher than 1200 ℃, the entire surface amorphous layer completely disappeared. The complex defects and defect impurity complexes near the end of the range are the main causes of these two different crystalline regions.