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采用同步辐射白光形貌术观察了6H和4H-SiC单晶片中的微小多型结构。基于透射同步辐射形貌术的衍射几何和晶片的取向,计算了SiC晶体中3种主要多型在Lane像中对应不同反射的成像位置,并与实际结果进行了比较。鉴别出6H和4H-SiC单晶中分别存在着少量的4H-SiC和15R-SiC多型的寄生生长。
Synchrotron radiation white topography was used to observe the microstructure of 6H and 4H-SiC single crystal wafers. Based on the diffraction geometry of the synchrotron radiation synchrotron and the orientation of the wafer, the imaging positions corresponding to the different reflections of the three major polymorphs in the SiC crystal were calculated and compared with the actual results. A small amount of 4H-SiC and 15R-SiC polytype parasitic growths were identified in the 6H and 4H-SiC single crystals, respectively.