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本文首次利用AES和XPS分析了闭管热氧化法生长GaAs自体氧化膜及其界面组成,其主要成分是Ga_2O_3和元素As,少量的As_2O_3分布在氧化层的外侧,从而推断出As_2O_3是本反应的氧化剂。
In this paper, the first closed-tube thermal oxidation growth of GaAs self-oxidized films and their interfacial composition was analyzed by AES and XPS for the first time. The main components were Ga 2 O 3 and As, a small amount of As 2 O 3 was distributed outside the oxide layer, Oxidant.