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引言Hg_(1-x)Cd_xTe的光谱响应主要取决于x值,即CdTe的摩尔份数。禁带宽度随x的变化为0.026eV/1％。沿晶片横向x值的偏差会使器件性能恶化,因此组份监测必须能区分出x值的很小差别,并且要有高的横向分辨率。器件制造商要求晶片截面上x值的偏差应小于0.004。凝固机理会造成大的x值偏差。NASA准备在失重条件下试验生长碲镉汞而进行的定向凝固研究表明,需要提供组份数据,以便了解对轴向和径向x值不均匀性带来的影响。因此致力于研究一种有用的技术。已经有好几种独特的技术被用于测定x
Introduction The spectral response of Hg_ (1-x) Cd_xTe mainly depends on the value of x, ie the molar fraction of CdTe. The band gap changes with x to 0.026 eV / 1%. Deviations in the x-value across the wafer can degrade device performance, so component monitoring must be able to distinguish small differences in x and have high lateral resolution. Device manufacturer requirements on the chip cross-section of the value of x deviation should be less than 0.004. The solidification mechanism can cause large x-value deviations. NASA's study of directional solidification in preparation for testing growth of cadmium telluride under weightless conditions shows that component data needs to be provided in order to understand the effects on axial and radial x-value inhomogeneities. Therefore devoted to studying a kind of useful technology. There are several unique techniques that have been used to determine x