论文部分内容阅读
Co-Pi and FeOOH cocatalysts were in-situ deposited on the surface of nanoporous BiVO_4 photoelectrodes.The FeOOH cocatalyst has little effect on the BiVO_4 samples’ morphologies,while the electrodeposited CoPi cocatalyst seems to affect the surface of BiVO_4 The impedance intensity modulated photocurrent spectroscopy(IMPS),Mott-Schottky(M-S) techniques characterize BiVO_4 samples photoelectrochemical performance with the deposition of Co-Pi and FeOOH.The Co-Pi/BiVO_4 shows better photoelectrochemical performance than the FeOOH/BiVO_4,but the FeOOH/BiVO_4 exhibited the better stabilities.The flat band potential and slope of M-S plotof FeOOH/BiVO_4 have little variations compared with BiVO_4.In contrast,Co-Pi/BiVO_4 exhibited the down shifted flat band potential,which is beneficial for the photoelectrochemical water oxidation.The electron transfer measurements revealed that the deposition of FeOOH and Co-Pi onto BiVO_4 significantly enhanced the photoelectrochemical performance via reducing the interface resistance and promoting the electron transport.Furthermore,Co-Pi cocatalysts can further pin the transport-limiting traps and significantly facilitate the electron transport.
Co-Pi and FeOOH cocatalysts were in-situ deposited on the surface of nanoporous BiVO_4 photoelectrodes. The FeOOH cocatalyst has little effect on the BiVO_4 samples’ morphologies, while the electrodeposited CoPi cocatalyst seems to affect the surface of BiVO_4 The impedance-modulated photocurrent spectroscopy (IMPS), Mott-Schottky (MS) techniques characterize BiVO_4 samples photoelectrochemical performance with the deposition of Co-Pi and FeOOH.The Co-Pi / BiVO_4 shows better photoelectrochemical performance than the FeOOH / BiVO_4, but the FeOOH / BiVO_4 exhibited the better stabilities. The flat band potential and slope of MS plot of FeOOH / BiVO_4 have little variations compared with BiVO_4.In contrast, Co-Pi / BiVO_4 exhibits the lowered shifted flat band potential, which is beneficial for the photoelectrochemical water oxidation. The electron transfer measurements revealed that the deposition of FeOOH and Co-Pi onto BiVO_4 significantly enhanced the photoelectrochemical performance via reduc ing the interface resistance and promoting the electron transport. Future Co, Co-Pi cocatalysts can further pin the transport-limiting traps and substantially facilitate the electron transport.