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The photoluminescence(PL) properties of a green and blue light-emitting InGaN/GaN multiple quantum well structure with a strong phase separated into quasi-quantum dots(QDs) and an InGaN matrix in the InGaN epilayer are investigated.The excitation power dependences of QD-related green emissions(P_D>) and matrix-related blue emissions(P_M) in the low excitation power range of the PL peak energy and line-width indicate that at 6 K both P_m and P_D are dominated by the combined action of Coulomb screening and localized state filling effect.However,at 300 K,P_m is dominated by the non-radiative recombination of the carriers in the InGaN matrix,while P_D is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunnelling.This is consistent with the excitation power dependence of the PL efficiency for the emission.
The photoluminescence (PL) properties of a green and blue light-emitting InGaN / GaN multiple quantum well structures with a strong phase separated into quasi-quantum dots (QDs) and an InGaN matrix in the InGaN epilayer are the excitation power dependences of QD-related green emissions (P_D) and matrix-related blue emissions (P_M) in the low excitation power range of the PL peak energy and line-width, that at 6K both P_m and P_D are dominated by the combined action of Coulomb screening and localized state filling effect. Even at 300 K, P_m is dominated by the non-radiative recombination of the carriers in the InGaN matrix, while P_D is influenced by the carriers transferred from the shallower QDs to deeper QDs by tunneling. This is is consistent with the excitation power dependence of the PL efficiency for the emission.