已经有许多作者对低频大功率晶体管和大电流型高频大功率晶体管的设计和制造问题进行过详细的研究,关于“高频高反压功率晶体管”方面的研究报告还不多见,作者在设计、试制了彩电视放管之后,觉得对这类晶体管的研制方面还有许多工作要做,而且这类器件是集成电路所不能取代而独立存在的一个重要分支,具有广阔的前景。 众所周知,高频功率器件是在较低的收集结击穿电压下,以提高器件的电流容量和特征频率来实现高频和大功率要求的,而高反压大功率晶体管是在较低的频率下,通过提高击穿电压和电流容量来实现的。显然,对于高频高反压功率晶体管,高频率和高击穿电压的要求 Many authors have studied the design and manufacture of low-frequency high-power transistors and high-current high-power high-power transistors in detail. The research on “high frequency and high backpressure power transistors” is still rare. Design, trial production of color TV tube, I feel that there is still much work on the development of such transistors to do, and these devices are integrated circuits can not replace the independent existence of an important branch, has broad prospects. As we all know, high-frequency power devices at low collector junction breakdown voltage to increase the device current capacity and the characteristic frequency to achieve high-frequency and high-power requirements, and high back pressure high-power transistors are at lower frequencies , By increasing the breakdown voltage and current capacity to achieve. Obviously, for high frequency high back pressure power transistors, high frequency and high breakdown voltage requirements