本文提出一种采用ＧａＡｓＭＥＳＦＥＴ工艺制造的平面微波变容管Ｃ－Ｖ特性解析模型，该模型着眼于小尺寸、平面化工艺及离子注入工艺，充分考虑了由其产生的栅下沟道串联电阻及侧电容对平面ＳｃｈａｔｔｋｙｄｉｏｄｅＣ－Ｖ特性的影响，这些影响对平面变容管影响较显著而在已有的模型中是被忽略或未作详细讨论的．文中还给出了该模型的算例及与实验结果，已有的几种典型模型算例的比较．结果表明，本文模型中参数易确定，与实验亦附合得很好． In this paper, a C-V analytical model of planar microwave varactor fabricated by GaAsMESFET process is proposed. This model focuses on the small size, planarization process and ion implantation process, taking into account the series resistance of the under-gate MOSFET and The influence of the side capacitance on the planar Schattkydiode C-V characteristics has a more significant effect on the planar varactors and has been ignored or not discussed in detail in the existing models. The paper also gives a numerical example of the model and comparison with the experimental results and several typical model examples. The results show that the parameters in this model are easy to be determined and well matched with the experiment.