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The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/Cr Ox/Ti Ox/Ti N structure for the first time.Transmission electron microscope image confirmed a viahole size of 0.4 lm.A 3-nm-thick amorphous Ti Oxwith 4-nm-thick polycrystalline Cr Oxlayer was observed.A small 0.4-lm device shows reversible resistive switching at a current compliance of 300 l A as compared to other larger size devices(1–8 lm)owing to reduction of leakage current through the Ti Oxlayer.Good device-to-device uniformity with a yield of[85%has been clarified by weibull distribution owing to higher slope/shape factor.The switching mechanism is based on oxygen vacancy migration from the Cr Oxlayer and filament formation/rupture in the Ti Oxlayer.Long read pulse endurance of[105cycles,good data retention of 6 h,and a program/erase speed of 1 ls pulse width have been obtained.
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing the device size in a Cr / Cr Ox / Ti Ox / Ti N structure for the first time. Transmission electron microscope image confirmed a via size of 0.4 lm.A 3-nm -thick amorphous Ti Oxwith 4-nm-thick polycrystalline Cr Oxlayer was observed. A small 0.4-lm device shows reversible resistive switching at a current compliance of 300 l A as compared to other larger size devices (1-8 lm) due to reduction of leakage current through the Ti Oxlayer. Good device-to-device uniformity with a yield of [85% has been clarified by weibull distribution due to higher slope / shape factor. The switching mechanism is based on oxygen vacancy migration from the Cr Oxlayer and Good results were obtained on a TiC layer. Long read pulse endurance of [105 cycles, good data retention of 6 h, and a program / erase speed of 1 ls pulse width have been obtained.