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结合硅片低温键合和中等剂量的氢离子注入，用智能剥离技术（Ｓｍ ａｒｔ－ｃｕｔ○Ｒ）成功地制备了７６ｍ ｍ 的ＳＯＩ材料．用原子力显微镜（ＡＦＭ）测得表面粗糙度约为７ｎｍ ，比普通的抛光硅片约大一个数量级．ＳＯＩ上层硅膜存在表面缺陷，包括未转移区和气泡等，这是由剥离前硅片键合界面存在的空洞引起．通过改进低温键合工艺，提高键合质量，可得到基本无宏观表面缺陷的ＳＯＩ材料．
In combination with low temperature bonding of silicon and moderate dose of hydrogen ion implantation, 76m m SOI material was successfully prepared by Sm-cut R R technique. Surface roughness as measured by atomic force microscopy (AFM) is about 7 nm, which is about an order of magnitude larger than normal polished wafers. The SOI upper silicon film has surface defects including non-transferred regions and bubbles, which are caused by voids existing in the bonding interface of the silicon wafer before peeling. By improving the low temperature bonding process and improving the bonding quality, a SOI material with substantially no macroscopic surface defects can be obtained.