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本文介绍了一种全干法二步刻蚀制造高发射效率的场发射阵列（ＦｉｅｌｄＥｍｉｔｔｅｒＡｒｒａｒｙ－ＦＥＡ）的方法。首先利用等离子刻蚀（ＰｌａｓｍａＥｔｃｈｉｎｇ－ＰＥ）的各向同性在由ＳｉＯ２掩模的硅衬底上刻出平顶尖锥，然后再利用反应离子刻蚀（ＲｅａｃｔｉｖｅＩｏｎＥｔｃｈｉｎｇ－ＲＩＥ）的各向异性，在ＰＥ的基础上进一步刻蚀来拔高尖锥并减少尖锥顶部的面积，以得到理想形状的ＦＥＡ尖锥。这种方法比ＲＩＥ一步刻蚀法和湿法刻蚀加ＲＩＥ二步法简单可靠。
This paper describes a dry-process two-step etch to fabricate a high-efficiency field emission array (FieldEmitterArrary-FEA) method. First of all, using a plasma etching (PlasmaEtching-PE) isotropy in the SiO2 mask by etching the silicon substrate flattened pyramid cone, and then use the reactive ion etching (ReactiveIonEtching-RIE) anisotropy in the PE Based on further etching to raise the tip and reduce the area of the top of the tip to obtain the desired shape of the FEA tip. This method is simple and reliable than RIE one-step etching and wet etching plus RIE two-step method.